| PART |
Description |
Maker |
| 154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五（巴西）总裁| 7.5AI（丙
|
NXP Semiconductors N.V.
Bel Fuse, Inc.
YEONHO Electronics Co., Ltd.
|
| BCR112W Q62702-C2284 |
NPN Silicon Digital Transistor (Switching circuit, inverter, inferface circuit, driver circuit) 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN Silicon Digital Transistor (Switching circuit/ inverter/ inferface circuit/ driver circuit)
NPN Silicon Digital Transistor (Switching circuit inverter inferface circuit driver circuit)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BU931T 5941 BUB931T BUB931TT4 |
TRANSISTOR | BJT | DARLINGTON | NPN | 400V V(BR)CEO | 10A I(C) | TO-263AB
From old datasheet system
HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTONS
HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLIGTONS
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| SG2824J_DESC SG28XXL_883B JAN2801J JAN2802J JAN280 |
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS
Driver - Medium Current Array; Package: LCC; 0.6 A, 50 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
Driver - Medium Current Array; Package: DIP; 0.6 A, 50 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
Driver - Medium Current Array; Package: DIP; 0.5 A, 95 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
Driver - Medium Current Array; Package: LCC; 0.5 A, 50 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
|
Microsemi, Corp.
http://
Microsemi Corporation
|
| BCR133S Q62702-C2376 BCR133SQ62702C2376 |
NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) NPN硅数字晶体管阵列（开关电路，逆变器，接口电路，驱动电路）
TRANSISTOR DIGITAL SOT363
NPN Silicon Digital Transistor Array (Switching circuit/ inverter/ interface circuit/ driver circuit)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| KRC661E KRC664E KRC662E KRC663E KRC660E |
EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) 外延平面NPN晶体管（开关，接口电路及驱动电路）
(KRC660E - KRC664E) EPITAXIAL PLANAR NPN TRANSISTOR
Built in Bias Resistor
|
KEC Holdings
KEC[KEC(Korea Electronics)]
Korea Electronics (KEC)
|
| KRC872U KRC871U KRC866U KRC867U KRC868U KRC869U KR |
Built in Bias Resistor
(KRC866U - KRC872U) EPITAXIAL PLANAR NPN TRANSISTOR
EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KRC872E KRC871E KRC866E KRC867E KRC868E KRC869E KR |
EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
(KRC866E - KRC872E) EPITAXIAL PLANAR NPN TRANSISTOR
Built in Bias Resistor
|
KEC[KEC(Korea Electronics)]
Korea Electronics (KEC)
|
